Location
Bengaluru, Karnataka, India
Posted
June 09, 2026
Job Description
Job Overview:
In this role, you will be pivotal in developing C-band and X-band GaN HEMTs on 0.25 um process node. You will tackle complex design and device fabrication challenges and work on state-of-the-art projects that push the boundaries of current technology.
Key Responsibilities:
Design:
Design reticles, masks and process flows for developing 0.25 um GaN on SiC HEMTs on 4-inch wafers as well as on smaller pieces
Fabrication:
Drive fabrication of such HEMTs in conjunction with a small-volume GaN foundry set up by Govt of India inside IISc Bangalore campus, including complete process integration of various process modules.
Intermediate characterization and testing:
Work with test engineers to have process test structures electrically tested after each process module to identify potential issues and to ensure module-to-module integrity in the fabrication flow.
Final device deliverable:
Own up the device develop...
In this role, you will be pivotal in developing C-band and X-band GaN HEMTs on 0.25 um process node. You will tackle complex design and device fabrication challenges and work on state-of-the-art projects that push the boundaries of current technology.
Key Responsibilities:
Design:
Design reticles, masks and process flows for developing 0.25 um GaN on SiC HEMTs on 4-inch wafers as well as on smaller pieces
Fabrication:
Drive fabrication of such HEMTs in conjunction with a small-volume GaN foundry set up by Govt of India inside IISc Bangalore campus, including complete process integration of various process modules.
Intermediate characterization and testing:
Work with test engineers to have process test structures electrically tested after each process module to identify potential issues and to ensure module-to-module integrity in the fabrication flow.
Final device deliverable:
Own up the device develop...