Location
Boise, ID, United States
Posted
June 20, 2026
Job Description
**Our vision is to transform how the world uses information to enrich life for** **_all_** **.**
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
As a DRAM Device & Cell Technology Engineer at Micron’s Boise R&D site, you will play a central role in defining, developing, and optimizing next generation DRAM architectures, cell technologies, and access device technologies. You will collaborate closely with device engineers, process integration teams, process teams, modeling groups, design teams, and product engineering partners to push the limits of density, performance, reliability, and manufacturability for future DRAM nodes.
This position is highly technical and hands on, requiring deep knowledge of device physics and semiconductor processing. Strong experimental design skills, and the a...
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
As a DRAM Device & Cell Technology Engineer at Micron’s Boise R&D site, you will play a central role in defining, developing, and optimizing next generation DRAM architectures, cell technologies, and access device technologies. You will collaborate closely with device engineers, process integration teams, process teams, modeling groups, design teams, and product engineering partners to push the limits of density, performance, reliability, and manufacturability for future DRAM nodes.
This position is highly technical and hands on, requiring deep knowledge of device physics and semiconductor processing. Strong experimental design skills, and the a...